The YX47XX is designed to drive high side and low side enhanced mode gallium nitride (GaN) FETs and low VTH MOSFETs using synchronous buck, boost, or half bridge configurations. This device features a 100V bootstrap diode integrated internally, providing independent inputs for high and low side outputs, enabling maximum flexibility in control. The high side bias voltage is generated using bootstrap technology and integrated with internal voltage clamping, which can prevent the gate voltage from exceeding the maximum gate source voltage rating of the enhanced mode GaN FET. The input of YX47XX is compatible with TTL logic and can withstand an input voltage of 7V regardless of VDD voltage. YX47XX has a separate gate output, which can independently and flexibly adjust the on and off strength.