What is GaN FET Power Transistor?
Gallium nitride is a compound semiconductor material composed of nitrogen and gallium. Due to a wide band gap votlage greater than 2.2eV, Gallium Nitride (GaN), ...
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Challenges of GaN DC-DC Conversion
Stimulated by the fast-increasing applications and the newly emerging GaN technology, the switching power converters are developed to the next-generation with f ...
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Contact us
Address: No. 30, Zhongchuang Road, Changhe Street, Binjiang District , Hangzhou , Zhejiang Province, China
Email: sales@prime-chip.com
SOLUTIONS
- Data Center
- Automotive
- Energy Storage
- Consumer
- Datasheets
- Design
- Simulation
- Quality
- Sample Request
- Demo Board
- Discussion Forum
- Feedback
